NTD12N10 |
RFQ for NTD12N10 Required Field |
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| Technical/Catalog Information | NTD12N10T4G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 1.28W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTD12N10T4G NTD12N10T4G NTD12N10T4GOSCT ND NTD12N10T4GOSCTND NTD12N10T4GOSCT |
| Product | Manufacturers | Pack | D/C |
| NTD12N10 | - | N/A | `06+(pb-free) |
Typical Application |
Features |
| • PWM Motor Controls• Power Supplies• Converters | • Pb−Free Package is Available• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Avalanche Energy Specified• IDSS and RDS(on) Specified at Elevated Temperature• Mounting Information Provided for the DPAK Package |
| Rating |
Symbol |
Value |
Unit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Drain−to−Source Voltage |
VDSS |
100 |
Vdc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Drain−to−Gate Voltage (RGS = 1.0 M) |
VDGB |
100 |
Vdc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGSM |
±20 ±30 |
Vdc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Drain Current − Continuous @ TA = 25 − Continuous @ TA = 100 − Pulsed (Note 3) |
ID ID IDM |
12 7.0 36 |
Adc Apk | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Total Power Dissipation Derate above 25 Total Power Dissipation @ TC = 25 (Note 1) Total Power Dissipation @ TC = 25 (Note 2) |
PD |
56.6 0.38 1.76 1.28 |
W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
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| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 50 SupplierPost a Buying LeadPDF / DatasheetRelated PDFRelated Models
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